igbt modules and applications (zju-fju bdu seminar)
time: 2:00-5:00 p.m. friday, june 29th, 2018
venue: room 418, electrical engineering building, yuquan campus
14:00-14:10 greeting, introduction of fuji semiconductor business,
speaker: naoto fujishima, fuji electric co., ltd
14:10-14:40 high i2t capability power modules for x ev power train with leadframe and rc-igbt combination,
speaker: akihiro osawa, fuji electric co., ltd.
14:40-15:05 high power next core(hpnc) package with 3.3kv sic hybrid chip combination,
speaker: yusuke sekino, fuji electric co., ltd.
15:05-15:30 1,700v igbt module with newly developed 7th generation technology,
speaker: song chen, fuji electric (china) co., ltd
15:30-15:40 short break
15:40-16:05 influence of negative voltage between gate and emitter to the turn-off behavior of igbt device,
speaker: fumio yukawa, fuji electric co., ltd
16:05-16:30 expansion of power rating with 7th-generation “x series” rc-igbt modules for industrial applications,
speaker: akio yamano, fuji electric co., ltd
16:30-16:40 q&a and closing